Abstract: Silicon continues to be the cornerstone of modern semiconductor technology owing to its abundance, stability, and versatility in electronic applications. However, the miniaturization of devices and the emergence of nanostructured materials have demanded improved conductivity and tailored properties. Doping, the intentional introduction of foreign atoms into the silicon lattice, is a widely used strategy to enhance its electrical behavior. This paper investigates the role of doping in silicon nanostructures, with a focus on how dopant concentration, type, and distribution affect conductivity. Through a review of experimental studies and theoretical models, the work highlights the influence of n-type and p-type dopants on carrier mobility, bandgap modification, and overall device performance. The findings suggest that doping at the nanoscale introduces unique challenges such as quantum confinement effects and dopant clustering, but also provides opportunities for high-performance nanoelectronics and optoelectronic devices.

Keywords: Silicon nanostructures, doping, electrical conductivity, carrier mobility, semiconductor physics

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